sot323 silicon planar dual schottky barrier diodes issue 1 - november 1998 j . series pair common cathode device type: ZUMD70-04 device type: zumd70-05 partmarking detail: d94 partmarking detail: d95 absolute maximum ratings. parameter symbol value unit power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. breakdown voltage v br 70 v i r =10 m a reverse leakage current i r 200 na v r =50v forward voltage v f 410 mv i f =1ma forward current i f 15 ma v f =1v capacitance c t 2.0 pf f=1mhz, v r =0 effective minority lifetime (1) t 100 ps f=54mhz, i pk = 20ma (krakauer test method) (1) sample test for typical characteristics graphs see zc2800e datasheet. 1 3 2 ZUMD70-04 zumd70-05 1 32 1 23 not recommended for new design please use bat54s
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